Target Impedance Z0 (Ω) Substrate Height h (mm) Initial Step Fraction Tolerance (%) Dielectric Constant Er Electrical Length (degrees) Frequency (GHz) Explore Other Blog Posts Abhi’s Lab Microstrip Line Calculator May 14, 2025 Target Impedance Z0 (Ω) Substrate Height h (mm) Initial Step Fraction Tolerance (%) Dielectric Constant Er Electrical Length (degrees) Frequency (GHz) Explore […]
Abhi’s Lab Microstrip Line Calculator Read More »
Introduction A bias network is used to supply the necessary DC voltages to the terminals of any amplifier. The main design goals for the bias network are: RF-DC isolation >20 dB RF port return loss >15 dB RF insertion loss <0.1 dB We need to achieve the above goals specifically for X-band (8-12 GHz) for the Scope of
Introduction Capacitors are equally vital in RF and microwave circuits, enabling critical functions like DC blocking, impedance matching, and harmonic filtering. However, their high-frequency performance is constrained by parasitic inductance inherent in real-world implementations. For capacitors, the self-resonant frequency (SRF) marks the point where parasitic inductance resonates with the intended capacitance, transforming the component into
Inductors are indispensable components in RF and microwave circuits, playing crucial roles in filtering, impedance matching, and signal tuning. However, their behavior at high frequencies is far from ideal due to inherent parasitic elements that limit their performance. One key parameter that defines the usable frequency range of an inductor is its self-resonant frequency (SRF)
Inductor Parasitics and Self-Resonant Frequency: Experimental Validation of Theory Read More »
